Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide
Moktadir, Z and Sato, K (2000) Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide. At Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France, 15 - 17 May 2000.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: May 15-17 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263851 |
| Date Deposited: | 04 Apr 2007 |
| Last Modified: | 02 Mar 2012 13:20 |
| Contributors: | Moktadir, Z (Author) Sato, K (Author) |
| Date: | 2000 |
| Additional Information: | Event Dates: May 15-17 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/263851 |
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