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Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide

Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide
Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
Moktadir, Z
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219

Moktadir, Z and Sato, K (2000) Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide. Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France. 14 - 16 May 2000.

Record type: Conference or Workshop Item (Other)

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More information

Published date: 2000
Additional Information: Event Dates: May 15-17
Venue - Dates: Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France, 2000-05-14 - 2000-05-16
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263851
URI: http://eprints.soton.ac.uk/id/eprint/263851
PURE UUID: c936d745-7d5e-4d2a-aff7-bf545f24bc32

Catalogue record

Date deposited: 04 Apr 2007
Last modified: 10 Dec 2021 21:40

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Contributors

Author: Z Moktadir
Author: K Sato

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