Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide


Moktadir, Z and Sato, K (2000) Instability and Scaling in Si(110) Etched with Tetramethyl Ammonium Hydroxide. At Physical chemistry of wet chemical etching of silicon workshop, Toulouse, France, 15 - 17 May 2000.

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: May 15-17
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263851
Date Deposited: 04 Apr 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263851

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