Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel
Walker, P. , Mizuta, Hiroshi, Uno, S. , Furuta, Y. and Hasko, D. (2004) Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel. IEEE Transactions on Electron Devices, ED-54, 212-218.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266204 |
| Date Deposited: | 22 Jul 2008 08:20 |
| Last Modified: | 18 Aug 2012 04:11 |
| Contributors: | Walker, P. (Author) Mizuta, Hiroshi (Author) Uno, S. (Author) Furuta, Y. (Author) Hasko, D. (Author) |
| Date: | 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 28 |
| URI: | http://eprints.soton.ac.uk/id/eprint/266204 |
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