Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel


Walker, P. , Mizuta, Hiroshi, Uno, S. , Furuta, Y. and Hasko, D. (2004) Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel. IEEE Transactions on Electron Devices, ED-54, 212-218.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266204
Date Deposited: 22 Jul 2008 08:20
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
ISI Citation Count:28
URI: http://eprints.soton.ac.uk/id/eprint/266204

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