Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices
Kamiya, T. , Furuta, Y. , Tan, Y. -T. , Durrani, Z. A. K. , Mizuta, Hiroshi and Ahmed, H. (2003) Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices. Solid State Phenomena, 93, 351-354.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266206 |
| Date Deposited: | 22 Jul 2008 08:26 |
| Last Modified: | 02 Mar 2012 12:41 |
| Contributors: | Kamiya, T. (Author) Furuta, Y. (Author) Tan, Y. -T. (Author) Durrani, Z. A. K. (Author) Mizuta, Hiroshi (Author) Ahmed, H. (Author) |
| Date: | 2003 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266206 |
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