Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors


Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T. , Tan, Y. T. , Durrani, Z. A. K. and Taniguchi, K. (2002) Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors. Japanese Journal of Applied Physics, 41, 2675-2678.

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Item Type: Article
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 266211
Date Deposited: 22 Jul 2008 08:57
Last Modified: 02 Mar 2012 14:04
Contributors: Furuta, Y. (Author)
Mizuta, Hiroshi (Author)
Nakazato, K. (Author)
Kamiya, T. (Author)
Tan, Y. T. (Author)
Durrani, Z. A. K. (Author)
Taniguchi, K. (Author)
Date: 2002
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266211

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