Carrier transport across few grain boundaries in highly doped polycrystalline silicon


Furuta, Y. , Mizuta, Hiroshi, Nakazato, K. , Tan, Y. T. , Kamiya, T. , Durrani, Z. A. K. , Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon. Japanese Journal of Applied Physics, 40, L615-L617.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266216
Date Deposited: 22 Jul 2008 09:10
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
ISI Citation Count:10
URI: http://eprints.soton.ac.uk/id/eprint/266216

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