Carrier transport across few grain boundaries in highly doped polycrystalline silicon
Furuta, Y. , Mizuta, Hiroshi, Nakazato, K. , Tan, Y. T. , Kamiya, T. , Durrani, Z. A. K. , Ahmed, H. and Taniguchi, K. (2001) Carrier transport across few grain boundaries in highly doped polycrystalline silicon. Japanese Journal of Applied Physics, 40, L615-L617.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266216 |
| Date Deposited: | 22 Jul 2008 09:10 |
| Last Modified: | 15 Aug 2012 03:19 |
| Contributors: | Furuta, Y. (Author) Mizuta, Hiroshi (Author) Nakazato, K. (Author) Tan, Y. T. (Author) Kamiya, T. (Author) Durrani, Z. A. K. (Author) Ahmed, H. (Author) Taniguchi, K. (Author) |
| Date: | 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 9 |
| URI: | http://eprints.soton.ac.uk/id/eprint/266216 |
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