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Fabrication of MOS-integrated metallic single-electron memories

Fabrication of MOS-integrated metallic single-electron memories
Fabrication of MOS-integrated metallic single-electron memories
0167-9317
265-268
Pepin, A.
9ad4ca62-a4a6-4104-a232-4db70dc2fe34
Vieu, C.
185f3730-3ade-4fed-b361-13effeab85d3
Launois, H.
ea17a37f-d5f4-4f44-a8c8-87a538a17aa0
Rosmeulen, M.
96c1dea8-c102-4556-a7f6-106b08fa6e9d
Rossum, M. van
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Muller, H. O.
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Williams, D.
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Mizuta, Hiroshi
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Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838
Pepin, A.
9ad4ca62-a4a6-4104-a232-4db70dc2fe34
Vieu, C.
185f3730-3ade-4fed-b361-13effeab85d3
Launois, H.
ea17a37f-d5f4-4f44-a8c8-87a538a17aa0
Rosmeulen, M.
96c1dea8-c102-4556-a7f6-106b08fa6e9d
Rossum, M. van
2279fe71-b654-47ad-9865-538bd226f800
Muller, H. O.
41c16f09-0922-4d2f-a9d4-8eab10f16020
Williams, D.
bcbcd58d-a02f-414c-8d2a-b1b05fead720
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Nakazato, K.
b12e41d3-3527-48ed-9ecd-b38f774ba838

Pepin, A., Vieu, C., Launois, H., Rosmeulen, M., Rossum, M. van, Muller, H. O., Williams, D., Mizuta, Hiroshi and Nakazato, K. (2000) Fabrication of MOS-integrated metallic single-electron memories. Microelectronic Engineering, 53, 265-268.

Record type: Article
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Published date: 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266222
URI: http://eprints.soton.ac.uk/id/eprint/266222
ISSN: 0167-9317
PURE UUID: 4b64735f-ca6f-49a8-8b74-b6283c2f0916

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Date deposited: 22 Jul 2008 09:28
Last modified: 14 Mar 2024 08:23

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Contributors

Author: A. Pepin
Author: C. Vieu
Author: H. Launois
Author: M. Rosmeulen
Author: M. van Rossum
Author: H. O. Muller
Author: D. Williams
Author: Hiroshi Mizuta
Author: K. Nakazato

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