Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states

Mizuta, Hiroshi (1998) Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states. VLSI DESIGN, 6, 103-106.

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Item Type:	Article
Divisions:	Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Item ID:	266232
Date Deposited:	22 Jul 2008 10:01
Last Modified:	01 Mar 2012 18:02
Contributors:	Mizuta, Hiroshi (Author)
Date:	1998
Status:	Published
Further Information:	Google Scholar
ISI Citation Count:	0
URI:	http://eprints.soton.ac.uk/id/eprint/266232

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