The electron mobility transition in n-GaAs heavily doped channel
Ohkura, Y. , Mizuta, Hiroshi, Ohbu, I. , Kagaya, O. , Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266238 |
| Date Deposited: | 22 Jul 2008 10:15 |
| Last Modified: | 02 Mar 2012 12:41 |
| Contributors: | Ohkura, Y. (Author) Mizuta, Hiroshi (Author) Ohbu, I. (Author) Kagaya, O. (Author) Katayama, K. (Author) Ihara, S. (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266238 |
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