The electron mobility transition in n-GaAs heavily doped channel


Ohkura, Y. , Mizuta, Hiroshi, Ohbu, I. , Kagaya, O. , Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9, 811-814.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266238
Date Deposited: 22 Jul 2008 10:15
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266238

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