Coherent-electron intrinsic multistability in a double-barrier tunnelling diode
Coherent-electron intrinsic multistability in a double-barrier tunnelling diode
Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. These solutions are characterized by different resonant states being pinned close to the conduction-band edge, with each solution having its own unique tunneling characteristics. Here we show how these multiple-branch I(v) characteristics can be engineered. This approach may open up new possibilities for high-speed functional devices.
2268-2270
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
1993
Wagner, M.
8dc45aa5-e216-4c0c-a807-090a01e2d1b1
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Wagner, M. and Mizuta, Hiroshi
(1993)
Coherent-electron intrinsic multistability in a double-barrier tunnelling diode.
Applied Physics Letters, 63 (16), .
(doi:10.1063/1.110525).
Abstract
Recently, a new mechanism leading to electrical multistability in coherent-electron tunneling devices was proposed. The reflection of coherent electrons at a barrier leads to the formation of resonant states in a quantum well in front of the barrier, and the resulting strongly modulated local density of states allows for multiple stable solutions of the Poisson equation to exist at fixed bias. These solutions are characterized by different resonant states being pinned close to the conduction-band edge, with each solution having its own unique tunneling characteristics. Here we show how these multiple-branch I(v) characteristics can be engineered. This approach may open up new possibilities for high-speed functional devices.
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Published date: 1993
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266241
URI: http://eprints.soton.ac.uk/id/eprint/266241
ISSN: 0003-6951
PURE UUID: 7dc82580-4391-4507-82a9-372bb1dc9481
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Date deposited: 22 Jul 2008 10:24
Last modified: 14 Mar 2024 08:23
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Author:
M. Wagner
Author:
Hiroshi Mizuta
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