Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy


Hiruma, K. , Mori, M. , Yanakura, E. , Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.

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Item Type: Article
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 266248
Date Deposited: 22 Jul 2008 10:47
Last Modified: 02 Mar 2012 13:42
Contributors: Hiruma, K. (Author)
Mori, M. (Author)
Yanakura, E. (Author)
Mizuta, Hiroshi (Author)
Takahashi, S. (Author)
Date: 1989
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266248

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