Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy


Hiruma, K. , Mori, M. , Yanakura, E. , Mizuta, Hiroshi and Takahashi, S. (1989) Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy. IEEE Transactions on Electron Devices, ED-36, 314-318.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266248
Date Deposited: 22 Jul 2008 10:47
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266248

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