Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science, 305, 363-368.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266255 |
| Date Deposited: | 22 Jul 2008 14:47 |
| Last Modified: | 02 Mar 2012 13:42 |
| Contributors: | Goodings, C.J. (Author) Mizuta, Hiroshi (Author) Cleaver, J.R.A. (Author) Ahmed, H. (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266255 |
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