Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices
Kamiya, T., Durrani, Z.A.K., Ahmed, H., Sameshima, T., Furuta, Y., Mizuta, Hiroshi and Lloyd, N. (2003) Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices. Journal of Vacuum Science and Technology B, 21, 1000-1003.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 266256 |
| Date Deposited: | 22 Jul 2008 14:51 |
| Last Modified: | 02 Mar 2012 14:04 |
| Contributors: | Kamiya, T. (Author) Durrani, Z.A.K. (Author) Ahmed, H. (Author) Sameshima, T. (Author) Furuta, Y. (Author) Mizuta, Hiroshi (Author) Lloyd, N. (Author) |
| Date: | 2003 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 7 |
| URI: | http://eprints.soton.ac.uk/id/eprint/266256 |
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