Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. At 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo,
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: May 2004 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266336 |
| Date Deposited: | 25 Jul 2008 08:29 |
| Last Modified: | 02 Mar 2012 13:42 |
| Contributors: | Fujita, H. (Author) Tsuchiya, Yoshishige (Author) Mizuta, Hiroshi (Author) Nohira, H. (Author) Hattori, T. (Author) Oda, S. (Author) |
| Date: | May 2004 |
| Additional Information: | Event Dates: May 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266336 |
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