Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD


Fujita, H., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H., Hattori, T. and Oda, S. (2004) Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD. At 2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, Tokyo,

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: May 2004
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266336
Date Deposited: 25 Jul 2008 08:29
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266336

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