Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers
Uno, S., Mori, N., Nakazato, K., Koshida, N. and Mizuta, Hiroshi (2004) Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers. At 2004 Silicon Nanoelectronics Workshop, Honolulu, , pp 121-122.
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| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: June 2004 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266347 |
| Date Deposited: | 25 Jul 2008 09:01 |
| Last Modified: | 02 Mar 2012 11:40 |
| Contributors: | Uno, S. (Author) Mori, N. (Author) Nakazato, K. (Author) Koshida, N. (Author) Mizuta, Hiroshi (Author) |
| Date: | June 2004 |
| Additional Information: | Event Dates: June 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266347 |
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