Tunnel barrier properties in polycrystalline-Si single-electron transistors”,

Furuta, Y., Mizuta, Hiroshi, Kamiya, T., Tan, Y. T. , Nakazato, K., Durrani, Z. A. K. and Taniguchi, K. (2002) Tunnel barrier properties in polycrystalline-Si single-electron transistors”,. At 32th European Solid-State Device Research Conference, Firenze, , pp 399-402.


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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: September 2002
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266379
Accepted Date and Publication Date:
September 2002Published
Date Deposited: 28 Jul 2008 08:22
Last Modified: 31 Mar 2016 14:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266379

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