Tunnel barrier properties in polycrystalline-Si single-electron transistors”,
Furuta, Y., Mizuta, Hiroshi, Kamiya, T., Tan, Y. T. , Nakazato, K., Durrani, Z. A. K. and Taniguchi, K. (2002) Tunnel barrier properties in polycrystalline-Si single-electron transistors”,. At 32th European Solid-State Device Research Conference, Firenze, , pp 399-402.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: September 2002 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266379 |
| Date Deposited: | 28 Jul 2008 08:22 |
| Last Modified: | 02 Mar 2012 13:00 |
| Contributors: | Furuta, Y. (Author) Mizuta, Hiroshi (Author) Kamiya, T. (Author) Tan, Y. T. (Author) Nakazato, K. (Author) Durrani, Z. A. K. (Author) Taniguchi, K. (Author) |
| Date: | September 2002 |
| Additional Information: | Event Dates: September 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266379 |
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