Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution
Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution. At 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede,
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| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: June 2000 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266386 |
| Date Deposited: | 28 Jul 2008 08:45 |
| Last Modified: | 02 Mar 2012 11:59 |
| Contributors: | Evans, G. (Author) Mizuta, Hiroshi (Author) Ahmed, H. (Author) |
| Date: | June 2000 |
| Additional Information: | Event Dates: June 2000 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266386 |
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