Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution


Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution. At 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede,

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Item Type: Conference or Workshop Item (Poster)
Additional Information: Event Dates: June 2000
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266386
Date Deposited: 28 Jul 2008 08:45
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266386

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