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Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution

Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution
Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution
Evans, G.
e5f4d450-de59-4812-88d2-31033b6f5cce
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf
Evans, G.
e5f4d450-de59-4812-88d2-31033b6f5cce
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Ahmed, H.
f9dabf57-dea0-4cf9-b989-c812b5eedeaf

Evans, G., Mizuta, Hiroshi and Ahmed, H. (2000) Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution. 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede.

Record type: Conference or Workshop Item (Poster)
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More information

Published date: June 2000
Additional Information: Event Dates: June 2000
Venue - Dates: 6th Workshop of Advanced Research Initiative in Microelectronics on Innovative Circuits and Systems for Nanoelectronics, Enshede, 2000-06-01
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266386
URI: http://eprints.soton.ac.uk/id/eprint/266386
PURE UUID: 6cbde2ef-1e8a-44ef-bc4e-7e05d0d55367

Catalogue record

Date deposited: 28 Jul 2008 08:45
Last modified: 14 Mar 2024 08:27

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Contributors

Author: G. Evans
Author: Hiroshi Mizuta
Author: H. Ahmed

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