Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm


Tsuchiya, Yoshishige, Fujita, H., Sato, D., Endoh, M., Kurosawa, M., Nohira, H., Hattori, T., Mizuta, Hiroshi and Oda, S. (2004) Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm. At 7th China-Japan Symposium on Thin Films, Chengdu Sichuan, , pp 118-121.

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: September 2004
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266388
Date Deposited: 28 Jul 2008 08:51
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266388

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