Tsuchiya, Yoshishige, Fujita, H., Sato, D., Endoh, M., Kurosawa, M., Nohira, H., Hattori, T., Mizuta, Hiroshi and Oda, S. (2004) Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm. 7th China-Japan Symposium on Thin Films, Chengdu Sichuan. pp 118-121 .
Record type:
Conference or Workshop Item
(Other)
More information
Published date: September 2004
Additional Information:
Event Dates: September 2004
Venue - Dates:
7th China-Japan Symposium on Thin Films, Chengdu Sichuan, 2004-09-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266388
URI: http://eprints.soton.ac.uk/id/eprint/266388
PURE UUID: a95e4919-959a-4ce0-97e6-a360118ff2d1
Catalogue record
Date deposited: 28 Jul 2008 08:51
Last modified: 14 Mar 2024 08:27
Export record
Contributors
Author:
Yoshishige Tsuchiya
Author:
H. Fujita
Author:
D. Sato
Author:
M. Endoh
Author:
M. Kurosawa
Author:
H. Nohira
Author:
T. Hattori
Author:
Hiroshi Mizuta
Author:
S. Oda
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.