Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates


Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1993) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. At The 10th International Conference on Electronic Properties of Two-Dimensional Systems, Newport,

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: June 1993
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266429
Date Deposited: 30 Jul 2008 09:37
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266429

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