Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates
Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1993) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. At The 10th International Conference on Electronic Properties of Two-Dimensional Systems, Newport,
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: June 1993 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266429 |
| Date Deposited: | 30 Jul 2008 09:37 |
| Last Modified: | 02 Mar 2012 12:21 |
| Contributors: | Goodings, C. (Author) Mizuta, Hiroshi (Author) Cleaver, J. R. A. (Author) Ahmed, H. (Author) |
| Date: | July 1993 |
| Additional Information: | Event Dates: June 1993 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266429 |
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