Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes
Mizuta, Hiroshi, Tanoue, T. and Takahashi, S. (1989) Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes. At IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, , pp 274-283.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: August 1989 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266443 |
| Date Deposited: | 30 Jul 2008 10:11 |
| Last Modified: | 02 Mar 2012 12:41 |
| Contributors: | Mizuta, Hiroshi (Author) Tanoue, T. (Author) Takahashi, S. (Author) |
| Date: | August 1989 |
| Additional Information: | Event Dates: August 1989 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266443 |
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