The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors


Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors. At 1989 American Physical Society Meeting

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Item Type: Conference or Workshop Item (Poster)
Additional Information: Event Dates: March 1989
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266444
Accepted Date and Publication Date:
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March 1989Published
Date Deposited: 30 Jul 2008 10:13
Last Modified: 31 Mar 2016 14:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266444

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