The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors
Kusano, C., Mizuta, Hiroshi and Yamaguchi, K. (1989) The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors. At 1989 American Physical Society Meeting
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| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: March 1989 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266444 |
| Date Deposited: | 30 Jul 2008 10:13 |
| Last Modified: | 02 Mar 2012 11:59 |
| Contributors: | Kusano, C. (Author) Mizuta, Hiroshi (Author) Yamaguchi, K. (Author) |
| Date: | March 1989 |
| Additional Information: | Event Dates: March 1989 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266444 |
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