High performance GaAs hetero-buffered MESFET's grown by 2 growth zone
Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. At 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta,
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: September 1988 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 266446 |
| Date Deposited: | 30 Jul 2008 10:19 |
| Last Modified: | 02 Mar 2012 13:00 |
| Contributors: | Hiruma, K. (Author) Yanakura, E. (Author) Mori, M. (Author) Mizuta, Hiroshi (Author) Takahashi, S. (Author) |
| Date: | September 1988 |
| Additional Information: | Event Dates: September 1988 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/266446 |
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