Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta.
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Published date: September 1988
Additional Information:
Event Dates: September 1988
Venue - Dates:
15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta, 1988-08-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 266446
URI: http://eprints.soton.ac.uk/id/eprint/266446
PURE UUID: 39a3e0b9-6b58-42fd-8f7b-fa70aa3a346d
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Date deposited: 30 Jul 2008 10:19
Last modified: 10 Dec 2021 22:17
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Contributors
Author:
K. Hiruma
Author:
E. Yanakura
Author:
M. Mori
Author:
Hiroshi Mizuta
Author:
S. Takahashi
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