High performance GaAs hetero-buffered MESFET's grown by 2 growth zone


Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. At 15th International Symposium on Gallium Arsenide and Related Compounds, Atlanta,

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: September 1988
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266446
Date Deposited: 30 Jul 2008 10:19
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266446

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