High performance GaAs hetero-buffered MESFET's grown by 2 growth zone


Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. Institute of Physics Conference Series 96, J. Harris eds., 487-490.

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Item Type: Article
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 266455
Date Deposited: 31 Jul 2008 08:14
Last Modified: 02 Mar 2012 13:42
Contributors: Hiruma, K. (Author)
Yanakura, E. (Author)
Mori, M. (Author)
Mizuta, Hiroshi (Author)
Takahashi, S. (Author)
Date: 1989
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266455

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