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High performance GaAs hetero-buffered MESFET's grown by 2 growth zone

High performance GaAs hetero-buffered MESFET's grown by 2 growth zone
High performance GaAs hetero-buffered MESFET's grown by 2 growth zone
487-490
Hiruma, K.
d22958c5-8c54-4cfa-9b21-d1b920f8ae25
Yanakura, E.
7a49045f-4a46-4439-90a8-9d2e52165c8c
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e
Hiruma, K.
d22958c5-8c54-4cfa-9b21-d1b920f8ae25
Yanakura, E.
7a49045f-4a46-4439-90a8-9d2e52165c8c
Mori, M.
cde93352-8d35-4627-9dff-52981bad5e0c
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Takahashi, S.
9a65ca68-97d5-47d6-b8bc-a7f8f240997e

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi and Takahashi, S. (1989) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. Institute of Physics Conference Series 96, J. Harris eds., 487-490.

Record type: Article

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More information

Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 266455
URI: http://eprints.soton.ac.uk/id/eprint/266455
PURE UUID: e3503bb5-77f7-4777-840b-5dc215cfd1aa

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Date deposited: 31 Jul 2008 08:14
Last modified: 10 Dec 2021 22:17

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Contributors

Author: K. Hiruma
Author: E. Yanakura
Author: M. Mori
Author: Hiroshi Mizuta
Author: S. Takahashi

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