Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates


Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science , 305, 363-368.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 266458
Date Deposited: 31 Jul 2008 08:22
Last Modified: 27 Mar 2014 20:11
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/266458

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