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VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation

VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation
VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation
This paper introduces a novel numerical carbon nanotube transistor (CNT) modelling approach which brings in a flexible and efficient cubic spline non-linear approximation of the non-equilibrium mobile charge density. The spline algorithm creates a rapid and accurate solution of the numerical relationship between the charge density and the self-consistent voltage, which leads to the speed-up of deriving the current through the channel without losing much accuracy. This modelling method also allows the flexibility of choosing different cubic spline intervals which may affect the performance of the model, but it is still capable of obtaining an acceleration of more than a 100 times while maintaining the accuracy within less than 1.5% normalised RMS error compared with previous reported theoretical modelling approach. The model has been proved working as transistors in a logic inverter implemented using VHDL-AMS and simulated in SystemVision, which shows the availability of implementing a circuit-level simulators with our proposed model. Additionally, although this model is originally based on the ideal ballistic transport characteristics, it shows good flexibility that the extension with numbers of non-ballistic features are certainly acceptable.
978-1-4244-2264-7
94-98
Zhou, Dafeng
fd16a287-48a9-4cfe-983b-f74aa7805d0f
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Zhou, Dafeng
fd16a287-48a9-4cfe-983b-f74aa7805d0f
Kazmierski, Tom
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d

Zhou, Dafeng, Kazmierski, Tom and Al-Hashimi, Bashir (2008) VHDL-AMS implementation of a numerical ballistic CNT model for logic circuit simulation. Specification, Verification and Design Languages, 2008. FDL 2008. Forum on, Stuttgart. 23 - 25 Sep 2008. pp. 94-98 .

Record type: Conference or Workshop Item (Paper)

Abstract

This paper introduces a novel numerical carbon nanotube transistor (CNT) modelling approach which brings in a flexible and efficient cubic spline non-linear approximation of the non-equilibrium mobile charge density. The spline algorithm creates a rapid and accurate solution of the numerical relationship between the charge density and the self-consistent voltage, which leads to the speed-up of deriving the current through the channel without losing much accuracy. This modelling method also allows the flexibility of choosing different cubic spline intervals which may affect the performance of the model, but it is still capable of obtaining an acceleration of more than a 100 times while maintaining the accuracy within less than 1.5% normalised RMS error compared with previous reported theoretical modelling approach. The model has been proved working as transistors in a logic inverter implemented using VHDL-AMS and simulated in SystemVision, which shows the availability of implementing a circuit-level simulators with our proposed model. Additionally, although this model is originally based on the ideal ballistic transport characteristics, it shows good flexibility that the extension with numbers of non-ballistic features are certainly acceptable.

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More information

Published date: 25 September 2008
Additional Information: Event Dates: 23-25 Sept. 2008
Venue - Dates: Specification, Verification and Design Languages, 2008. FDL 2008. Forum on, Stuttgart, 2008-09-23 - 2008-09-25
Organisations: Electronic & Software Systems, EEE

Identifiers

Local EPrints ID: 267150
URI: http://eprints.soton.ac.uk/id/eprint/267150
ISBN: 978-1-4244-2264-7
PURE UUID: dc4efe44-fc84-4822-8736-860a62b243b4

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Date deposited: 02 Mar 2009 16:34
Last modified: 14 Mar 2024 08:43

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Contributors

Author: Dafeng Zhou
Author: Tom Kazmierski
Author: Bashir Al-Hashimi

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