Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation
Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 9, (1), 99-107. (doi:10.1109/TNANO.2009.2017019).
- Accepted Version
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.
|Digital Object Identifier (DOI):||doi:10.1109/TNANO.2009.2017019|
|Keywords:||terms—carbon nanotube transistors, numerical modeling, non-ballistic effects, circuit simulation|
|Subjects:||Q Science > QA Mathematics > QA75 Electronic computers. Computer science|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > EEE
Faculty of Physical Sciences and Engineering > Electronics and Computer Science > Electronic & Software Systems
Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||02 Mar 2009 16:46|
|Last Modified:||27 Mar 2014 20:12|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)