Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation


Kazmierski, Tom, Zhou, Dafeng, Al-Hashimi, Bashir and Ashburn, Peter (2010) Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 9, (1), 99-107. (doi:10.1109/TNANO.2009.2017019).

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Description/Abstract

This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.

Item Type: Article
ISSNs: 1536-125X (print)
1941-0085 (electronic)
Keywords: terms—carbon nanotube transistors, numerical modeling, non-ballistic effects, circuit simulation
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > EEE
Faculty of Physical Sciences and Engineering > Electronics and Computer Science > Electronic & Software Systems
Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267152
Date Deposited: 02 Mar 2009 16:46
Last Modified: 27 Mar 2014 20:12
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267152

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