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Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping

Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping
Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping
Wang, Yangang
84511804-36d1-44c7-90d4-a18201735a08
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Merrett, Michael
bd23c4c9-5603-4946-8b8e-0f76c8184125
Wang, Yangang
84511804-36d1-44c7-90d4-a18201735a08
Zwolinski, Mark
adfcb8e7-877f-4bd7-9b55-7553b6cb3ea0
Merrett, Michael
bd23c4c9-5603-4946-8b8e-0f76c8184125

Wang, Yangang, Zwolinski, Mark and Merrett, Michael (2008) Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping. IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, United States.

Record type: Conference or Workshop Item (Paper)

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More information

Published date: September 2008
Venue - Dates: IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, United States, 2008-08-31
Organisations: EEE

Identifiers

Local EPrints ID: 267236
URI: http://eprints.soton.ac.uk/id/eprint/267236
PURE UUID: b5851188-7fb0-46c8-9e72-0b5733e08328
ORCID for Mark Zwolinski: ORCID iD orcid.org/0000-0002-2230-625X

Catalogue record

Date deposited: 31 Mar 2009 16:41
Last modified: 09 Jan 2022 02:36

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Contributors

Author: Yangang Wang
Author: Mark Zwolinski ORCID iD
Author: Michael Merrett

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