Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping
Wang, Yangang, Zwolinski, Mark and Merrett, Michael (2008) Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping. In, IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, USA,
Download
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > EEE |
| Item ID: | 267236 |
| Date Deposited: | 31 Mar 2009 16:41 |
| Last Modified: | 01 Mar 2012 11:49 |
| Contributors: | Wang, Yangang (Author) Zwolinski, Mark (Author) Merrett, Michael (Author) |
| Date: | September 2008 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/267236 |
Actions (login required)
 |
View Item |
