Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping


Wang, Yangang, Zwolinski, Mark and Merrett, Michael (2008) Behavioural modelling for stability of CMOS SRAM cells subject to random discrete doping. In, IEEE Inernational Behavioral Modeling and Simulation Workshop (BMAS), San Jose, CA, USA,

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Item Type: Conference or Workshop Item (Paper)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > EEE
ePrint ID: 267236
Date Deposited: 31 Mar 2009 16:41
Last Modified: 28 Mar 2014 15:11
Research Funder: EPSRC
Projects:
Meeting the design challenges of the nano-CMOS electronics
Funded by: EPSRC (EP/E002064/1)
Led by: Mark Zwolinski
1 October 2006 to 31 December 2010
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267236

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