SiGeC HBTs: impact of carbon on performance
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J. (2007) SiGeC HBTs: impact of carbon on performance. At Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko Springer, 177-178.
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A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
|Item Type:||Conference or Workshop Item (Speech)|
|Keywords:||bipolar, SiGeC, diffusion, HBT, bipolar transistor|
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||14 May 2009 10:19|
|Last Modified:||01 Mar 2012 11:49|
|Contributors:||Mitrovic, I.Z. (Author)
El Mubarek, H.A.W. (Author)
Buiu, O. (Author)
Hall, S. (Author)
Ashburn, P. (Author)
Zhang, J. (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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