SiGeC HBTs: impact of carbon on performance
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J. (2007) SiGeC HBTs: impact of carbon on performance. At Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko Springer, 177-178.
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Description/Abstract
A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Keywords: | bipolar, SiGeC, diffusion, HBT, bipolar transistor |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 267364 |
| Date Deposited: | 14 May 2009 10:19 |
| Last Modified: | 01 Mar 2012 11:49 |
| Contributors: | Mitrovic, I.Z. (Author) El Mubarek, H.A.W. (Author) Buiu, O. (Author) Hall, S. (Author) Ashburn, P. (Author) Zhang, J. (Author) |
| Date: | 2007 |
| Status: | Published |
| Publisher: | Springer |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/267364 |
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