SiGeC HBTs: impact of carbon on performance

Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S., Ashburn, P. and Zhang, J. (2007) SiGeC HBTs: impact of carbon on performance. At Nanoscaled Semiconductor on Insulator Structures and Devices, editors S.Hall, A.N.Nazarov, V.S.Lysenko Springer, 177-178.


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A UK consortium has recently reported advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.

Item Type: Conference or Workshop Item (Speech)
Keywords: bipolar, SiGeC, diffusion, HBT, bipolar transistor
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267364
Accepted Date and Publication Date:
Date Deposited: 14 May 2009 10:19
Last Modified: 27 Mar 2014 20:13
Further Information:Google Scholar

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