Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices


El Mubarek, H.A.W. and Ashburn, P. (2007) Fluorine enriched SOI (FSOI): a novel solution for future ultra-shallow junction devices. At Materials Research Society Conference, San Francisco, USA, 09 - 13 May 2007. MRS.

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Description/Abstract

This paper presents the novel concept of fluorine enriched silicon on insulator (FSOI) for boron diffusion suppression in ultra shallow junction SOI devices. A high energy fluorine implant is made into SOI wafers to create vacancy-fluorine clusters in the active Si layer. Interstitial dislocation loops are also created around the range of the fluorine implant and the implantation energy is chosen so that the clusters are separated from the loops by the buried oxide layer. Fluorine implantation energies of 185 and 400keV are studied and SIMS is used to characterize the boron and fluorine profiles. It is shown that a suppression of boron diffusion is obtained for both fluorine implant energies but the boron diffusion suppression is significantly larger for the 185keV implant.

Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: 9th -13th May
Keywords: SOI, fluorine, boron, diffusion, vacancies, ultra-shallow junctions
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267366
Date Deposited: 14 May 2009 10:41
Last Modified: 27 Mar 2014 20:13
Publisher: MRS
Contact Email Address: pa@ecs.soton.ac.uk
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267366

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