Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide
Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.
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| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 13-14 June 2009 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 267371 |
| Date Deposited: | 14 May 2009 16:17 |
| Last Modified: | 02 Mar 2012 12:41 |
| Contributors: | Kurihara, T (Author) Nagahama, Y (Author) Kobayashi, D (Author) Niikura, H (Author) Tsuchiya, Yoshishige (Author) Mizuta, Hiroshi (Author) Nohira, H (Author) Uchida, K (Author) Oda, S (Author) |
| Date: | 13 June 2009 |
| Additional Information: | Event Dates: 13-14 June 2009 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/267371 |
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