Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide


Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Nohira, H, Uchida, K and Oda, S (2009) Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide. At IEEE Silicon Nanoelectronics Workshop 2009, Kyoto, 13 - 14 Jun 2009.

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Item Type: Conference or Workshop Item (Poster)
Additional Information: Event Dates: 13-14 June 2009
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267371
Date Deposited: 14 May 2009 16:17
Last Modified: 27 Mar 2014 20:13
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267371

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