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Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6

Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6
Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6
0040-6090
317-319
Akhtar, S
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Tanaka, A
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Usami, K
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Tsuchiya, Yoshishige
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Oda, S
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Akhtar, S
ea3bcfe1-5854-45e7-b57a-08f9bca8fb73
Tanaka, A
fa5fbcd0-ee49-4fcd-a6f5-6ced631b3e12
Usami, K
9c9e150c-6d0f-4710-a534-2bfda5d012fa
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Oda, S
514339b3-f8de-4750-8d20-c520834b2477

Akhtar, S, Tanaka, A, Usami, K, Tsuchiya, Yoshishige and Oda, S (2008) Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6. Thin Solid Films, 517, 317-319.

Record type: Article
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Published date: 27 August 2008
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267418
URI: http://eprints.soton.ac.uk/id/eprint/267418
ISSN: 0040-6090
PURE UUID: 0c524176-19b5-4711-a729-665b2aaee3f1

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Date deposited: 29 May 2009 15:07
Last modified: 14 Mar 2024 08:49

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Contributors

Author: S Akhtar
Author: A Tanaka
Author: K Usami
Author: Yoshishige Tsuchiya
Author: S Oda

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