High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots


Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, Mizuta, Hiroshi and Oda, S (2005) High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots. In, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ed. J. Menendez and C. G. Van de Walle,. , American Institute of physics, 1589-1590.

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Item Type: Book Section
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 267420
Date Deposited: 29 May 2009 15:56
Last Modified: 26 Apr 2013 04:37
Contributors: Tsuchiya, Yoshishige (Author)
Takai, K (Author)
Momo, N (Author)
Nagami, T (Author)
Yamaguchi, S (Author)
Shimada, T (Author)
Mizuta, Hiroshi (Author)
Oda, S (Author)
Date: 2005
Status: Published
Publisher: American Institute of physics
Further Information:Google Scholar
ISI Citation Count:1
URI: http://eprints.soton.ac.uk/id/eprint/267420

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