The University of Southampton
University of Southampton Institutional Repository

Position-controllable Ge nanowires growth on patterned Au catalyst substrate

Position-controllable Ge nanowires growth on patterned Au catalyst substrate
Position-controllable Ge nanowires growth on patterned Au catalyst substrate
A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate by low-pressure chemical vapor deposition. Both transmission electron microscope and X-ray diffraction results indicate that Ge nanowires are single crystalline with diamond structure. By optimizing the electron-beam lithography process, Au patterns with a diameter of 10 nm were prepared by lift-off method. The growth of Ge nanowires can be precisely controlled by adjusting the location of catalysts, which may offer the possibility of in situ fabrication of nanowire devices
15004
Li, C.
1ee7b95a-ca14-41be-92fb-0d7a56252361
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Yamahata, G.
ea3ea646-33fb-4168-9216-1b7bea9ed402
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde
Li, C.
1ee7b95a-ca14-41be-92fb-0d7a56252361
Usami, K.
f506146b-9864-482a-bc61-1de94522d32c
Yamahata, G.
ea3ea646-33fb-4168-9216-1b7bea9ed402
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Mizuta, Hiroshi
f14d5ffc-751b-472b-8dba-c8518c6840b9
Oda, S.
4a88f225-39f6-4c89-a9da-8c35fbfe6fde

Li, C., Usami, K., Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2009) Position-controllable Ge nanowires growth on patterned Au catalyst substrate. Applied Physics Express, 2, 15004. (doi:10.1143/APEX.2.015004).

Record type: Article

Abstract

A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate by low-pressure chemical vapor deposition. Both transmission electron microscope and X-ray diffraction results indicate that Ge nanowires are single crystalline with diamond structure. By optimizing the electron-beam lithography process, Au patterns with a diameter of 10 nm were prepared by lift-off method. The growth of Ge nanowires can be precisely controlled by adjusting the location of catalysts, which may offer the possibility of in situ fabrication of nanowire devices

Text
ePaper004.pdf - Other
Download (2MB)

More information

Published date: 9 January 2009
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 267421
URI: http://eprints.soton.ac.uk/id/eprint/267421
PURE UUID: 58f7a5c0-f59f-42ae-a85c-4da298bcd52a

Catalogue record

Date deposited: 29 May 2009 16:08
Last modified: 14 Mar 2024 08:50

Export record

Altmetrics

Contributors

Author: C. Li
Author: K. Usami
Author: G. Yamahata
Author: Yoshishige Tsuchiya
Author: Hiroshi Mizuta
Author: S. Oda

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×