Position-controllable Ge nanowires growth on patterned Au catalyst substrate

Li, C., Usami, K., Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi and Oda, S. (2009) Position-controllable Ge nanowires growth on patterned Au catalyst substrate. Applied Physics Express, 2, 015004. (doi:10.1143/APEX.2.015004).


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A well position-controllable single Ge nanowire array was grown on patterned Au catalysts substrate by low-pressure chemical vapor deposition. Both transmission electron microscope and X-ray diffraction results indicate that Ge nanowires are single crystalline with diamond structure. By optimizing the electron-beam lithography process, Au patterns with a diameter of 10 nm were prepared by lift-off method. The growth of Ge nanowires can be precisely controlled by adjusting the location of catalysts, which may offer the possibility of in situ fabrication of nanowire devices

Item Type: Article
Digital Object Identifier (DOI): doi:10.1143/APEX.2.015004
ISSNs: 1882-0778 (print)
1882-0786 (electronic)
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267421
Accepted Date and Publication Date:
9 January 2009Published
Date Deposited: 29 May 2009 16:08
Last Modified: 31 Mar 2016 14:14
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267421

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