Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing
Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin , Garcia Ramirez, Mario, Yoshimura, Hideo, Tsuchiya, Yoshishige and Oda, Shunri (2008) Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing. At 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2008), Beijing,
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Description/Abstract
In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 267459 |
| Date Deposited: | 04 Jun 2009 08:52 |
| Last Modified: | 26 Apr 2013 04:37 |
| Contributors: | Mizuta, Hiroshi (Author) Nagami, Tasuku (Author) Ogi, Jun (Author) Pruvost, Benjamin (Author) Garcia Ramirez, Mario (Author) Yoshimura, Hideo (Author) Tsuchiya, Yoshishige (Author) Oda, Shunri (Author) |
| Date: | 2008 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/267459 |
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