Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.
966-968
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli V.
63cbd2be-2ea8-4075-803c-7535bc4d7c4f
de Groot, Cornelis H.
92cd2e02-fcc4-43da-8816-c86f966be90c
September 2009
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Xiaoli V.
63cbd2be-2ea8-4075-803c-7535bc4d7c4f
de Groot, Cornelis H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Husain, Muhammad, Li, Xiaoli V. and de Groot, Cornelis H.
(2009)
Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode.
IEEE Electron Device Letters, 30 (9), .
(doi:10.1109/LED.2009.2025673).
Abstract
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.
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Published date: September 2009
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 267551
URI: http://eprints.soton.ac.uk/id/eprint/267551
ISSN: 0741-3106
PURE UUID: 0e94ec96-0ee2-4c00-bf24-920d138a3a18
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Date deposited: 11 Jun 2009 15:02
Last modified: 15 Mar 2024 03:11
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Author:
Muhammad Husain
Author:
Xiaoli V. Li
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