Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode
Husain, Muhammad, Li, Xiaoli V. and de Groot, Cornelis H. (2009) Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode. IEEE Electron Device Letters, 30, (9), 966-968.
- Published Version
We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||11 Jun 2009 15:02|
|Last Modified:||23 Jul 2012 03:49|
|Contributors:||Husain, Muhammad (Author)
Li, Xiaoli V. (Author)
de Groot, Cornelis H. (Author)
|Further Information:||Google Scholar|
|ISI Citation Count:||1|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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