Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode


Husain, Muhammad, Li, Xiaoli V. and de Groot, Cornelis H. (2009) Observation of negative differential conductance in a reverse-biased Ni/Ge Schottky diode. IEEE Electron Device Letters, 30, (9), 966-968. (doi:10.1109/LED.2009.2025673).

Download

[img] PDF - Version of Record
Download (405Kb)

Description/Abstract

We report the experimental observation of negative differential conductance in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation we show that, at reverse bias, electons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed negative differential conductance is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1109/LED.2009.2025673
ISSNs: 0741-3106 (print)
1558-0563 (electronic)
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267551
Accepted Date and Publication Date:
Status
September 2009Published
Date Deposited: 11 Jun 2009 15:02
Last Modified: 31 Mar 2016 14:15
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267551

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics