Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell


Ramirez, M.A.G, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2009) Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell. At 35th International Conference on Micro and Nano Engineering (MNE2009), Ghent,

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Item Type: Conference or Workshop Item (Speech)
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 267684
Date Deposited: 19 Jul 2009 13:34
Last Modified: 02 Mar 2012 14:04
Contributors: Ramirez, M.A.G (Author)
Tsuchiya, Yoshishige (Author)
Mizuta, Hiroshi (Author)
Date: 1 October 2009
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267684

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