Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K


Yamahata, G., Kodera, T., Mizuta, H., Uchida, K. and Oda, S. (2009) Control of inter-dot electrostatic coupling in an asymmetric silicon double quantum dot operating at 4.5 K. Applied Physics Express, 2, (9), 095002-1-095002-4. (doi:10.1143/APEX.2.095002).

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Description/Abstract

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1143/APEX.2.095002
ISSNs: 1882-0778 (print)
1882-0786 (electronic)
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 267802
Accepted Date and Publication Date:
Status
21 August 2009Published
Date Deposited: 26 Aug 2009 00:42
Last Modified: 21 Dec 2016 16:56
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/267802

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