Gallium-diffused waveguides in sapphire
Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire. Optics Letters, 26, (20), 1586-1588 .
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The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10−2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.
|Divisions:||Faculty of Physical and Applied Science > Optoelectronics Research Centre
|Date Deposited:||06 Oct 2009 10:16|
|Last Modified:||15 Aug 2012 03:20|
|Contributors:||Apostolopoulos, V. (Author)
Hickey, L.M.B. (Author)
Sager, D.A. (Author)
Wilkinson, J.S. (Author)
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