Gallium-diffused waveguides in sapphire

Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire. Optics Letters, 26, (20), 1586-1588 . (doi:10.1364/OL.26.001586).


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The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10-2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1364/OL.26.001586
ISSNs: 1539-4794
Related URLs:
Keywords: Ti-LiNbO3, Wave-Guide Laser
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
Faculty of Physical Sciences and Engineering > Physics and Astronomy > Quantum, Light & Matter
ePrint ID: 268005
Accepted Date and Publication Date:
Date Deposited: 06 Oct 2009 10:16
Last Modified: 28 Dec 2016 02:34

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