Gallium-diffused waveguides in sapphire
Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire. Optics Letters, 26, (20), 1586-1588 . (doi:10.1364/OL.26.001586).
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The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10−2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.
|Digital Object Identifier (DOI):||doi:10.1364/OL.26.001586|
|Keywords:||Ti-LiNbO3, Wave-Guide Laser|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
Faculty of Physical Sciences and Engineering > Physics and Astronomy > Quantum, Light & Matter
|Date Deposited:||06 Oct 2009 10:16|
|Last Modified:||27 Mar 2014 20:14|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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