Gallium-diffused waveguides in sapphire
Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2001) Gallium-diffused waveguides in sapphire. Optics Letters, 26, (20), 1586-1588 .
Download
Full text not available from this repository.
Description/Abstract
The fabrication and characterisation of gallium-diffused planar waveguides in sapphire is reported. Waveguides were fabricated by diffusion of 60nm - 200nm thick films of gallium oxide into c-cut sapphire at 1600°C for times ranging between 6 and 16 hours. Near-field intensity profiles of the guided modes were measured at wavelengths between 488nm and 850nm, and the surface index elevation was estimated to be up to (0.6±0.02)x10−2. Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.
| Item Type: | Article |
|---|---|
| Related URLs: | |
| Divisions: | Faculty of Physical and Applied Science > Optoelectronics Research Centre |
| Item ID: | 268005 |
| Date Deposited: | 06 Oct 2009 10:16 |
| Last Modified: | 15 Aug 2012 03:20 |
| Contributors: | Apostolopoulos, V. (Author) Hickey, L.M.B. (Author) Sager, D.A. (Author) Wilkinson, J.S. (Author) |
| Date: | 2001 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/268005 |
Actions (login required)
 |
View Item |
