Modeling and improvement of a metallization system subjected to fast temperature cycle stress


Smorodin, T., Bohm, C., Gaspar, J., Schmidt, M., Paul, O. and Stecher, M. (2008) Modeling and improvement of a metallization system subjected to fast temperature cycle stress. In, Proc. International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems EuroSimE 2008 , 1-6.

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Description/Abstract

The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.

Item Type: Conference or Workshop Item (Paper)
Keywords: MOS integrated circuits, finite element analysis, integrated circuit reliability, semiconductor device metallisation, transistors, DMOS transistors, fast temperature cycle stress, metallization system, repetitive inductive load switching, temperature cycle reliability, thermomechanical FEM-simulation, thermomechanical deformation
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science
ePrint ID: 268260
Date Deposited: 25 Nov 2009 13:27
Last Modified: 27 Mar 2014 20:14
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/268260

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