Modeling and improvement of a metallization system subjected to fast temperature cycle stress
Modeling and improvement of a metallization system subjected to fast temperature cycle stress
The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.
MOS integrated circuits, finite element analysis, integrated circuit reliability, semiconductor device metallisation, transistors, DMOS transistors, fast temperature cycle stress, metallization system, repetitive inductive load switching, temperature cycle reliability, thermomechanical FEM-simulation, thermomechanical deformation
1-6
Smorodin, T.
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Bohm, C.
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Gaspar, J.
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Schmidt, M.
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Paul, O.
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Stecher, M.
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2008
Smorodin, T.
d460c178-bdd2-4dc5-9aa6-0b5d0b291610
Bohm, C.
e82fcbe4-8b49-4400-8c16-ff9952514381
Gaspar, J.
ceee0b43-e4d1-4363-a805-c2493af99e14
Schmidt, M.
68f4851a-9b14-48a9-b08f-854618465310
Paul, O.
b7c68a04-77fc-46be-ae16-7270e1e89ff3
Stecher, M.
35f1918d-3847-44f6-868e-7cc93a65c6b3
Smorodin, T., Bohm, C., Gaspar, J., Schmidt, M., Paul, O. and Stecher, M.
(2008)
Modeling and improvement of a metallization system subjected to fast temperature cycle stress.
Proc. International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems EuroSimE 2008.
.
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Conference or Workshop Item
(Paper)
Abstract
The device failure of DMOS transistors under repetitive inductive load switching is dominated by the thermomechanical deformation of the metallization. The failure evolution is thus experimentally studied with special test structures and highlighted by thermomechanical FEM-simulation. Based on these findings a novel metallization concept is shown, which improves the fast temperature cycle reliability.
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Published date: 2008
Venue - Dates:
Proc. International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems EuroSimE 2008, 2008-01-01
Keywords:
MOS integrated circuits, finite element analysis, integrated circuit reliability, semiconductor device metallisation, transistors, DMOS transistors, fast temperature cycle stress, metallization system, repetitive inductive load switching, temperature cycle reliability, thermomechanical FEM-simulation, thermomechanical deformation
Organisations:
Electronics & Computer Science
Identifiers
Local EPrints ID: 268260
URI: http://eprints.soton.ac.uk/id/eprint/268260
PURE UUID: cb077eb8-5f97-4b6f-9a8c-6af0f1972d2d
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Date deposited: 25 Nov 2009 13:27
Last modified: 08 Jan 2022 11:53
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Contributors
Author:
T. Smorodin
Author:
C. Bohm
Author:
J. Gaspar
Author:
M. Schmidt
Author:
O. Paul
Author:
M. Stecher
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