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Exploiting SWCNT Structural Variability Towards the Development of a Photovoltaic Device

Exploiting SWCNT Structural Variability Towards the Development of a Photovoltaic Device
Exploiting SWCNT Structural Variability Towards the Development of a Photovoltaic Device
In this paper we propose a conceptual Photovoltaic device that comprises a large number of vertically aligned Single-Walled Carbon Nanotubes (SWCNT) having distinct geometrical structure properties. Through employing analytical models of the CNT, we demonstrate how this structural variation can be exploited in absorbing a broadband of the solar spectra. The results show that given a group of CNTs with a low mean diameter dµ ≤ 1 nm and high diameter spread (dσ), optimal band-gap variability can be achieved to maximize the potential of absorption within the proposed CNT-based Photovoltaic device.
El Shabrawy, Karim
39574916-2de0-4818-bca6-f03ebc6f7850
Maharatna, Koushik
80de250a-5278-40d6-9f03-7579336e8dc3
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
El Shabrawy, Karim
39574916-2de0-4818-bca6-f03ebc6f7850
Maharatna, Koushik
80de250a-5278-40d6-9f03-7579336e8dc3
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d

El Shabrawy, Karim, Maharatna, Koushik and Al-Hashimi, Bashir (2009) Exploiting SWCNT Structural Variability Towards the Development of a Photovoltaic Device. International Symposium on Integrated Circuits (ISIC2009), Singapore.

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we propose a conceptual Photovoltaic device that comprises a large number of vertically aligned Single-Walled Carbon Nanotubes (SWCNT) having distinct geometrical structure properties. Through employing analytical models of the CNT, we demonstrate how this structural variation can be exploited in absorbing a broadband of the solar spectra. The results show that given a group of CNTs with a low mean diameter dµ ≤ 1 nm and high diameter spread (dσ), optimal band-gap variability can be achieved to maximize the potential of absorption within the proposed CNT-based Photovoltaic device.

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More information

Published date: 16 December 2009
Additional Information: Event Dates: 16/12/2009
Venue - Dates: International Symposium on Integrated Circuits (ISIC2009), Singapore, 2009-12-16
Organisations: Electronic & Software Systems

Identifiers

Local EPrints ID: 268324
URI: http://eprints.soton.ac.uk/id/eprint/268324
PURE UUID: a274ac22-5de1-48a4-a6e0-62cae29cd45f

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Date deposited: 17 Dec 2009 16:41
Last modified: 14 Mar 2024 09:08

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Contributors

Author: Karim El Shabrawy
Author: Koushik Maharatna
Author: Bashir Al-Hashimi

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