Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories


Garcia Ramirez, Mario, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2010) Suspended Gate Silicon Nanodot Memory (SGSNM) cell towards Non-Volatile RAM Memories. At International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for "More than Moore" & "Beyond CMOS" era, held in the University of Southampton, UK, University of Southampton,

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Item Type: Conference or Workshop Item (Poster)
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 268773
Date Deposited: 23 Mar 2010 20:59
Last Modified: 01 Mar 2012 11:58
Contributors: Garcia Ramirez, Mario (Author)
Tsuchiya, Yoshishige (Author)
Mizuta, Hiroshi (Author)
Date: 1 March 2010
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/268773

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