Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique


Tanaka, A, Tsuchiya, Y, Usami, K, Saito, S, Arai, T, Mizuta, H and Oda, S (2008) Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir-Blodgett Technique. JAPANESE JOURNAL OF APPLIED PHYSICS, 47, 3731-3734.

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Description/Abstract

We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir-Blodgett technique. nc-Si dots with a diameter of 10 +/- 1 nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of 7.33 x 10(11) cm(-2). Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms. [DOI: 10.1143/JJAP.47.3731]

Item Type: Article
Additional Information: Imported from ISI Web of Science
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 269598
Date Deposited: 21 Apr 2010 07:46
Last Modified: 26 Apr 2013 04:50
Contributors: Tanaka, A (Author)
Tsuchiya, Y (Author)
Usami, K (Author)
Saito, S (Author)
Arai, T (Author)
Mizuta, H (Author)
Oda, S (Author)
Date: 2008
Additional Information: Imported from ISI Web of Science
Status: Unpublished
Further Information:Google Scholar
ISI Citation Count:5
URI: http://eprints.soton.ac.uk/id/eprint/269598

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