Field-dependant hopping conduction in silicon nanocrystal films
Rafiq, MA, Durrani, ZAK, Mizuta, H, Hassan, MM and Oda, S (2008) Field-dependant hopping conduction in silicon nanocrystal films. JOURNAL OF APPLIED PHYSICS, 104, -.
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Description/Abstract
We investigate the electric field dependence of hopping conduction in 300 nm thick films of similar to 8 nm diameter silicon nanocrystals. The hopping conductivity sigma follows a ln(sigma)proportional to 1/T-1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F>similar to 1x10(5) V/cm, the hopping conductivity follows a ln(sigma)proportional to F-1/2 dependence. This dependence is investigated using the concept of "effective temperature," introduced originally by Shklovskii for hopping conduction in disordered materials.
| Item Type: | Article |
|---|---|
| Additional Information: | Imported from ISI Web of Science |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 269709 |
| Date Deposited: | 21 Apr 2010 07:46 |
| Last Modified: | 02 Mar 2012 11:41 |
| Contributors: | Rafiq, MA (Author) Durrani, ZAK (Author) Mizuta, H (Author) Hassan, MM (Author) Oda, S (Author) |
| Date: | 2008 |
| Additional Information: | Imported from ISI Web of Science |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| ISI Citation Count: | 5 |
| URI: | http://eprints.soton.ac.uk/id/eprint/269709 |
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