Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors?
Manoharan, M., Tsuchiya, Y., Oda, S. and Mizuta, H. (2008) Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? 2008 IEEE Silicon Nanoelectronics Workshop (SNW 2008), 2 pp.-.
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Description/Abstract
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
| Item Type: | Article |
|---|---|
| Additional Information: | Imported from ISI Web of Science |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 269917 |
| Date Deposited: | 21 Apr 2010 07:46 |
| Last Modified: | 26 Apr 2013 04:51 |
| Contributors: | Manoharan, M. (Author) Tsuchiya, Y. (Author) Oda, S. (Author) Mizuta, H. (Author) |
| Date: | 2008 |
| Additional Information: | Imported from ISI Web of Science |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/269917 |
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