Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation


Uchino, T, Ayre, GN, Smith, DC, Hutchison, JL, de Groot, CH and Ashburn, P (2009) Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156, K144-K148.

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Description/Abstract

This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of single-walled carbon nanotubes (SWNTs). The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density of 4.1 +/- 1.2 mu m in length/mu m(2) obtained from the Ge nanocrystals is comparable to that obtained from metal-catalyst-based methods used to fabricate SWNT field-effect transistors. A carbon implantation after Ge nanocrystal formation significantly enhances the process operating window for the growth of the SWNTs and increases the area density.

Item Type: Article
Additional Information: Imported from ISI Web of Science
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 270143
Date Deposited: 21 Apr 2010 07:46
Last Modified: 27 Mar 2014 20:15
Further Information:Google Scholar
ISI Citation Count:5
URI: http://eprints.soton.ac.uk/id/eprint/270143

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