Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure


Zhou, X, Uchida, K, Mizuta, H and Oda, S (2009) Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure. JOURNAL OF APPLIED PHYSICS, 106, -.

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Description/Abstract

Electron transport in the surface oxidized Si nanocrystals ensembles is described based on electrical measurements of thin film transistor structures as functions of temperature and voltage. Contact resistance has been greatly reduced by using a heavily doped silicon-on-insulator layer as electrodes, compared with devices based on Al/SiNCs/Al structures. Traps with the activation energy of 147 and 103 meV have been found when SiNC channels are applied with high gate voltage. The mechanism that these two traps successively dominate the Poole-Frenkel type conduction in low and high drain-source voltage region is discussed based on an assumption that the density of these two traps is different. Trapped carriers' effects on the electric field distribution are believed to be responsible for the difference of the G-V-ds(1/2) Slopes in the different drain-sources regions, which is in accord with the experimental results of the hydrogen annealing treatment. The carrier mobility is also discussed based on the measurement of gate voltage dependence of the drain-source current. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3204669]

Item Type: Article
Additional Information: Imported from ISI Web of Science
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 270239
Date Deposited: 21 Apr 2010 07:46
Last Modified: 27 Mar 2014 20:15
Further Information:Google Scholar
ISI Citation Count:4
URI: http://eprints.soton.ac.uk/id/eprint/270239

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