Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K


Yamahata, G, Kodera, T, Mizuta, H, Uchida, K and Oda, S (2009) Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K. APPLIED PHYSICS EXPRESS, 2, -.

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Description/Abstract

We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices. (C) 2009 The Japan Society of Applied Physics

Item Type: Article
Additional Information: Imported from ISI Web of Science
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 270263
Date Deposited: 21 Apr 2010 07:46
Last Modified: 27 Mar 2014 20:15
Further Information:Google Scholar
ISI Citation Count:9
URI: http://eprints.soton.ac.uk/id/eprint/270263

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