Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
Yamahata, G, Kodera, T, Mizuta, H, Uchida, K and Oda, S (2009) Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K. APPLIED PHYSICS EXPRESS, 2, -.
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Description/Abstract
We report on electron transport measurements of a lithographically-defined silicon double quantum dot (DQD) coupled in series with a top gate and side gates. The structure of the top gate coupled uniformly to the DQD is suitable for realizing a few-electron regime. The obtained small DQD enables us to observe a clear honeycomb-like charge stability diagram at a temperature of 4.5 K. The validity of the DQD structure is confirmed by theoretical calculations. Furthermore, we demonstrate successful modulation of the inter-dot electrostatic coupling by the side gate. Externally tunable coupling is essential for practical implementation of spin-based quantum information devices. (C) 2009 The Japan Society of Applied Physics
| Item Type: | Article |
|---|---|
| Additional Information: | Imported from ISI Web of Science |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 270263 |
| Date Deposited: | 21 Apr 2010 07:46 |
| Last Modified: | 02 Mar 2012 11:41 |
| Contributors: | Yamahata, G (Author) Kodera, T (Author) Mizuta, H (Author) Uchida, K (Author) Oda, S (Author) |
| Date: | 2009 |
| Additional Information: | Imported from ISI Web of Science |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| ISI Citation Count: | 9 |
| URI: | http://eprints.soton.ac.uk/id/eprint/270263 |
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