Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory


Nagami, T, Tsuchiya, Y, Saito, S, Arai, T, Shimada, T, Mizuta, H and Oda, S (2009) Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory. JAPANESE JOURNAL OF APPLIED PHYSICS, 48, -.

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Description/Abstract

The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about 3 x 10 (C) 2009 The Japan Society of Applied Physics

Item Type: Article
Additional Information: Imported from ISI Web of Science
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 270367
Date Deposited: 21 Apr 2010 07:46
Last Modified: 27 Mar 2014 20:15
Further Information:Google Scholar
ISI Citation Count:2
URI: http://eprints.soton.ac.uk/id/eprint/270367

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