Numerically efficient modeling of CNT transistors with ballistic and nonballistic effects for circuit simulation
Kazmierski, T.J., Al-Hashimi, B.M. and Ashburn, P. (2010) Numerically efficient modeling of CNT transistors with ballistic and nonballistic effects for circuit simulation. IEEE Transactions on Nanotechnology, 99-107.
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Description/Abstract
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique that is based on cubic spline approximation of the nonequilibrium mobile charge density. The approximation facilitates the solution of the self-consistent voltage equation in a CNT so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and nonballistic transport theories and experimental results.
| Item Type: | Article |
|---|---|
| Additional Information: | Imported from ISI Web of Science |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > EEE Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 270734 |
| Date Deposited: | 21 Apr 2010 07:45 |
| Last Modified: | 24 Jul 2012 03:30 |
| Contributors: | Kazmierski, T.J. (Author) Al-Hashimi, B.M. (Author) Ashburn, P. (Author) |
| Date: | January 2010 |
| Additional Information: | Imported from ISI Web of Science |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 5 |
| URI: | http://eprints.soton.ac.uk/id/eprint/270734 |
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