A self-aligned silicidation technology for surround gate vertical MOSFETs


Hakim, M.M.A., Mallik, K., de Groot, C.H., Redman-White, W., Ashburn, P., Tan, L. and Hall, S. (2009) A self-aligned silicidation technology for surround gate vertical MOSFETs. At European Solid State Device Research Conference (ESSDERC), Athens, GR, 14 - 18 Sep 2009. 4pp, 978-981.

Download

[img] PDF - Published Version
Download (1452Kb)

Description/Abstract

We report for the first time a silicidation technology for surround gate vertical MOSFETs. The technology uses a double spacer comprising a polysilicon spacer for the surround gate and a nitride spacer for the silicidation. Silicided 120nm nchannel devices show a 30% improvement in drive current in comparison to non silicided devices, but this is accompanied by a small degradation in sub-threshold slope and DlBL. This problem is solved using a frame gate architecture in which the pillar sidewalls are protected from the silicidation process. Silicided frame gate transistors show a similar increase in drive current without any significant degradation of sub-threshold slope or DlBL. For a 120 nm channel length, silicided frame gate vertical nMOSFETs show a 30% improvement in the drive current with an excellent sub-threshold slope of 78mV/decade and a DIBL of 30 mVIV. For an 80 nm channel length, a 43% improvement in the drive current is obtained.

Item Type: Conference or Workshop Item (Poster)
Keywords: vertical mosfets, silicidation
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 270869
Date Deposited: 21 Apr 2010 02:22
Last Modified: 27 Mar 2014 20:15
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/270869

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics