Modeling the Impact of Process Variation on Resistive Bridge Defects


Khursheed, Syed Saqib, Zhong, Shida, Al-Hashimi, Bashir, Aitken, Robert and Kundu, Sandip (2010) Modeling the Impact of Process Variation on Resistive Bridge Defects. In, International Test Conference, Austin, Texas, USA,

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Description/Abstract

Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive bridges. This paper presents a fast and accurate technique to model the effect of process variation on resistive bridge defects. The proposed model is implemented in two stages: firstly, it employs an accurate transistor model (BSIM4) to calculate the critical resistance of a bridge; secondly, the effect of process variation is incorporated in this model by using three transistor parameters: gate length (L), threshold voltage (V) and effective mobility (ueff) where each follow Gaussian distribution. Experiments are conducted on a 65-nm gate library (for illustration purposes), and results show that on average the proposed modeling technique is more than 7 times faster and in the worst case, error in bridge critical resistance is 0.8% when compared with HSPICE.

Item Type: Conference or Workshop Item (Paper)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > Electronic & Software Systems
Faculty of Physical Sciences and Engineering > Electronics and Computer Science > EEE
ePrint ID: 271480
Date Deposited: 11 Aug 2010 17:10
Last Modified: 27 Mar 2014 20:16
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/271480

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